Ucwaningo ngokumiswa kwamaseli we-TOPCon wohlobo lwe-N
- ibuyekezwe: 2023-05-14
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oitech
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Eminyakeni yamuva, ngokuthuthukiswa nokusetshenziswa kobuchwepheshe obusha, izinqubo ezintsha kanye nezakhiwo ezintsha zamaseli e-photovoltaic, imboni ye-photovoltaic cell ithuthuke ngokushesha. Njengobuchwepheshe obubalulekile obusekela ukuthuthukiswa kwamandla amasha namagridi ahlakaniphile, amaseli ohlobo lwe-n asephenduke indawo eshisayo ekuthuthukisweni kwezimboni zomhlaba wonke.
Ngoba i-n-type tunneling oxide layer passivation contact photovoltaic cell (ngemuva kwalokhu ebizwa ngokuthi "n-type TOPCon cell") inenzuzo yokusebenza yokuthuthukisa kakhulu ukusebenza kahle uma kuqhathaniswa namaseli e-photovoltaic avamile, ngokukhuphuka kwezindleko ezilawulekayo kanye nokuguqulwa kwemishini evuthiwe, iseli ye-TOPCon yohlobo lwe-n Ukwandiswa okwengeziwe kwamandla okukhiqiza ekhaya sekuphenduke isiqondiso esiyinhloko sokuthuthukiswa kwamaseli e-photovoltaic asebenza kahle kakhulu.
Ukumiswa kohlobo lwe-n-TOPCon amabhethri abhekene nezinkinga ezifana nokungakwazi ukumboza amazinga amanje kanye nesidingo sokuthuthukisa ukusebenza kwamazinga. Leli phepha lizokwenza ucwaningo nokuhlaziya ngokumiswa kwamabhethri ohlobo lwe-n-TOPCon, futhi linikeze iziphakamiso zokuma.Isimo sokuthuthukiswa kobuchwepheshe beselula be-n-type TOPConIsakhiwo se-p-type silicon base material esetshenziswa kumaseli e-photovoltaic avamile ngu-n+pp+, indawo eyamukela ukukhanya ingaphezulu kwe-n+, futhi i-phosphorous diffusion isetshenziselwa ukwakha i-emitter.Kunezinhlobo ezimbili eziyinhloko ze-homojunction photovoltaic cell structures for n-type silicon base materials, eyodwa i-n+np+, kanti enye i-p+nn+.Uma kuqhathaniswa ne-silicon yohlobo lwe-p, i-silicon yohlobo lwe-n inesikhathi esingcono kakhulu sempilo yenkampani yenkampani yenethiwekhi, i-attenuation ephansi, namandla amakhulu okusebenza kahle.Iseli enamacala amabili ohlobo lwe-n eyenziwe nge-silicon yohlobo lwe-n inezinzuzo zokusebenza kahle okuphezulu, ukusabela okuhle kokukhanya okuphansi, i-coefficient ephansi yezinga lokushisa, kanye nokukhiqizwa kwamandla okuphindwe kabili.Njengoba izidingo zemboni zokuguqulwa kwe-photoelectric ukusebenza kahle kwamaseli e-photovoltaic ziqhubeka nokwanda, amaseli e-photovoltaic asebenza kahle kakhulu ohlobo lwe-n njenge-TOPCon, HJT, ne-IBC kancane kancane azohlala emakethe yesikhathi esizayo.Ngokuvumelana ne-International Photovoltaic Roadmap (ITRPV) yobuchwepheshe bemboni ye-photovoltaic yomhlaba wonke kanye nesibikezelo semakethe, amaseli ohlobo lwe-n amele ubuchwepheshe besikhathi esizayo kanye nesiqondiso sokuthuthukiswa kwemakethe kwamaseli e-photovoltaic ekhaya naphesheya.Phakathi kwemizila yobuchwepheshe yezinhlobo ezintathu zamabhethri ohlobo lwe-n, amabhethri e-n-type TOPCon abe umzila wezobuchwepheshe onesilinganiso esikhulu kakhulu sezezimboni ngenxa yezinzuzo zawo zokusebenzisa izinga eliphezulu lemishini ekhona kanye nokusebenza kahle kokuguqulwa okuphezulu.
Njengamanje, amabhethri e-TOPCon ohlobo lwe-n embonini ngokuvamile alungiswa ngokususelwa kubuchwepheshe be-LPCVD (i-low-pressure vapor-phase chemical deposition), enezinqubo eziningi, ukusebenza kahle kanye nesivuno kukhawulelwe, futhi imishini incike ekuthengisweni kwamanye amazwe. Idinga ukuthuthukiswa. Ukukhiqizwa okukhulu kwamaseli we-TOPCon wohlobo lwe-n kubhekene nobunzima bezobuchwepheshe njengezindleko eziphezulu zokukhiqiza, inqubo eyinkimbinkimbi, izinga lesivuno esiphansi, kanye nokusebenza kahle okunganele kokuguqulwa.Imboni yenze imizamo eminingi yokuthuthukisa ubuchwepheshe be-n-type TOPCon cell. Phakathi kwazo, i-in-situ doped polysilicon layer technology isetshenziswa ekufakweni kwenqubo eyodwa ye-tunneling oxide layer kanye ne-doped polysilicon (n+-polySi) ngaphandle kokugoqa;I-electrode yensimbi yebhethri ye-n-type TOPCon ilungiselelwe ngokusebenzisa ubuchwepheshe obusha bokuxuba i-aluminium paste nokunamathisela kwesiliva, okunciphisa izindleko futhi kuthuthukise ukumelana nokuxhumana; yamukela ukwakheka kwe-emitter yangaphambili ekhethiwe kanye nobuchwepheshe besakhiwo sokuxhumana se-multi-layer tunneling passivation contact.Lokhu kuthuthukiswa kwezobuchwepheshe kanye nokwenza kahle kwenqubo kwenze iminikelo ethile ekuthuthukisweni kwezimboni zamaseli we-N-type TOPCon.Ucwaningo ngokumiswa kwebhethri le-n-type TOPConKunomehluko othile wezobuchwepheshe phakathi kwamaseli e-TOPCon ohlobo lwe-n namaseli avamile we-p-type photovoltaic, futhi ukwahlulelwa kwamaseli e-photovoltaic emakethe kusekelwe ezindinganisweni zamanje zebhethri ezivamile, futhi asikho isidingo esicacile esijwayelekile samaseli e-photovoltaic ohlobo lwe-n. .Iseli ye-TOPCon yohlobo lwe-n inezici zokunciphisa kancane, i-coefficient yokushisa ephansi, ukusebenza kahle okuphezulu, i-coefficient ephezulu ye-bifacial, i-voltage ephezulu yokuvula, njll. Ihlukile kumaseli we-photovoltaic avamile ngokwezindinganiso.
Lesi sigaba sizoqala kusukela ekunqunyweni kwezinkomba ezijwayelekile zebhethri le-n-type TOPCon, ukwenza ukuqinisekiswa okuhambisanayo eduze kwe-curvature, amandla e-electrode tensile, ukwethembeka, nokusebenza kokunciphisa ukukhanya okubangelwa ukukhanya, futhi nixoxe ngemiphumela yokuqinisekisa.Ukunqunywa kwezinkomba ezijwayelekileAmaseli e-photovoltaic avamile asekelwe kumkhiqizo ojwayelekile we-GB/T29195-2012 "Izicaciso Ezivamile Zamangqamuzana Elanga E-Crystalline Silicon Solar Esetshenziswa Phansi", okudinga ngokucacile imingcele yesici yamaseli e-photovoltaic.Ngokusekelwe kuzidingo ze-GB/T29195-2012, kuhlanganiswe nezici zobuchwepheshe zamabhethri e-n-type TOPCon, ukuhlaziywa kwenziwa into ngento.Bheka Ithebula 1, amabhethri e-TOPCon yohlobo lwe-n ayafana ngokuyisisekelo namabhethri avamile ngokosayizi nokubukeka kwawo;
Ithebula 1 Ukuqhathanisa phakathi kwebhethri yohlobo lwe-n-TOPCon kanye nezidingo ze-GB/T29195-2012
Ngokuya ngemingcele yokusebenza kukagesi kanye ne-coefficient yokushisa, ukuhlolwa kwenziwa ngokuya nge-IEC60904-1 ne-IEC61853-2, futhi izindlela zokuhlola ziyahambisana namabhethri ajwayelekile; izidingo zezakhiwo zemishini zihlukile kumabhethri avamile ngokwezinga lokugoba namandla aqinile e-electrode.Ngaphezu kwalokho, ngokuya ngendawo yangempela yohlelo lokusebenza yomkhiqizo, ukuhlolwa kokushisa okumanzi kwengezwa njengemfuneko yokuthembeka.Ngokusekelwe ekuhlaziyweni okungenhla, ukuhlolwa kwenziwe ukuze kuqinisekiswe izakhiwo zemishini nokuthembeka kwamabhethri e-TOPCon yohlobo lwe-n.Imikhiqizo yeseli ye-Photovoltaic evela kubakhiqizi abahlukene abanomzila ofanayo wobuchwepheshe bakhethwa njengamasampula okuhlola. Amasampula anikezwe yi-Taizhou Jolywood Optoelectronics Technology Co., Ltd.Ukuhlolwa kwenziwe kumalabhorethri ezinkampani zangaphandle kanye namalabhorethri ebhizinisi, futhi imingcele efana nedigri yokugoba namandla e-electrode tensile, ukuhlolwa komjikelezo oshisayo nokuhlolwa kokushisa okumanzi, kanye nokusebenza kokuqala kokunciphisa ukukhanya okubangelwa ukukhanya kwahlolwa futhi kwaqinisekiswa.Ukuqinisekiswa Kwezakhiwo Zemishini Yamaseli E-PhotovoltaicIdigri yokugoba namandla e-electrode tensile kuzakhiwo zemishini zamabhethri e-n-type TOPCon ahlolwa ngokuqondile eshidini lebhethri ngokwalo, futhi ukuqinisekiswa kwendlela yokuhlola kungokulandelayo.Gobisa ukuhlolwa kokuqinisekisaI-Curvature isho ukuchezuka phakathi kwephoyinti elimaphakathi lendawo emaphakathi yesampula ehloliwe kanye nendiza eyireferensi yendawo emaphakathi. Kuyinkomba ebalulekile yokuhlola ukucaba kwebhethri ngaphansi kwengcindezi ngokuhlola ukugoba kweseli ye-photovoltaic.Indlela yayo yokuhlola eyinhloko ukulinganisa ibanga ukusuka enkabeni ye-wafer ukuya endizeni eyireferensi kusetshenziswa inkomba yokucindezela okuphansi.I-Jolywood Optoelectronics kanye ne-Xi'an State Power Investment inikeze izingcezu ezingu-20 zosayizi we-M10 amabhethri e-TOPCon ohlobo lwe-n-type ngayinye. Ukucaba kwendawo kwakungcono kuno-0.01mm, futhi ukugoba kwebhethri kwahlolwa ngethuluzi lokulinganisa elinesinqumo esingcono kuno-0.01mm.Ukuhlolwa kokugoba kwebhethri kwenziwa ngokuvumelana nezinhlinzeko ze-4.2.1 ku-GB/T29195-2012.Imiphumela yokuhlolwa ikhonjiswe kuThebula lesi-2.
Ithebula 2 Ukugoba imiphumela yokuhlolwa kwamaseli we-TOPCon wohlobo lwe-n
Amazinga okulawula angaphakathi ebhizinisi e-Jolywood ne-Xi'an State Power Investment womabili adinga ukuthi idigri yokugoba ingabi ngaphezu kuka-0.1mm. Ngokokuhlaziywa kwemiphumela yokuhlolwa kwamasampula, idigri yokugoba emaphakathi ye-Jolywood Optoelectronics ne-Xi'an State Power Investment ingu-0.056mm no-0.053mm ngokulandelanayo. Amanani aphezulu angu-0.08mm no-0.10mm, ngokulandelana.Ngokuya ngemiphumela yokuhlolwa kokuqinisekisa, imfuneko yokuthi ukugoba kwebhethri le-TOPCon le-n-n ayikho ngaphezu kuka-0.1mm kuyaphakanyiswa.Ukuqinisekiswa kokuhlolwa kwamandla e-ElectrodeIribhoni yensimbi ixhunywe kuntambo yegridi yeseli ye-photovoltaic ngokushisela ukuze kuqhutshwe okwamanje. Iribhoni ye-solder kanye ne-electrode kufanele ixhunywe ngokuzinzile ukuze kuncishiswe ukumelana nokuxhumana nokuqinisekisa ukusebenza kahle kokuqhuba kwamanje.Ngalesi sizathu, ukuhlolwa kwamandla e-electrode tensile power on the grid grid yebhethri kungahlola ukushisela kwe-electrode kanye nekhwalithi yokushisela yebhethri, okuyindlela evamile yokuhlola amandla okunamathela enjini yebhethri ye-photovoltaic.<section style="margin: 0px 0px 16px;padding: 0px;outline
